Testing dual igbt modules of amperis battery discharger. Insulated gate bipolar transistor an insulated gate bipolar transistor igbt is a threeterminal power semiconductor device primarily used as an electronic switch which, as it was developed, came to combine high efficiency and fast switching. Insulated gate bipolar transistor thermal model the switching devices are exposed to different working temperatures depending on the power losses caused by the voltage drop and the current flowing through the device at the same time. We generally do not recommend retesting by the customer because of the potential of damaging the device. Highlight the file v, and go to device new igbt to create a new. The igbt must be uniformly clamped across the whole electrode surface and the clamp force must be within the datasheet limits. This paper describes the design and development of a 6 ka1. With a multimeter set to check diodes, check across the c1c2e1 junction. Igbt short circuit safe operating area soa capability. In psim, go to utilities device database editor to launch the pcdeditor.
The multimeter featured in the video is a fluke 177. An igbt or insulated gate bipolar transistor is a semiconductor. Most manufacturers igbt devices are 100% tested before shipping and guaranteed to meet the published parametric data. Here, the igbt module semix151gd066hds is used as the example to illustrate the procedure of entering a device into psims device database. Consequently, operation of an igbt is very similar to a power mosfet. Jan 16, 2015 for the test procedure you will need a multimeter that is capable of measuring resistance and has a diode check symbol for testing diodes. No formula was provided for igbt, therefore a mosfet and bipolar junction transistor bjt was modeled in series to represent an igbt. The first procedure is to check the diode action between the gate and cathode terminals of the scr. Select device new igbt, and confirm that you want to save the new device to igbt. While the igbt switches on or off, high peaks of the gate current have to be delivered from the driver.
Nov 05, 2019 igbt testing with multimeter pdf to test an igbt with multimeter, the meter should be used in diodechecking mode. Develop a reliability test system for igbt power modules dumitru anghelus 10 p a g e 1. Due to their purpose evaluation boards are not subjected to the same procedures regarding returned material analysis rma, process change notification pcn and product withdraw pwd as regular products. Testing an igbt troubleshooting guidelines pillar technologies. A multimeter can be used to test scrs quite effectively. The insulated gate bipolar transistor igbt is a threeterminal power semiconductor device used as an electronic switch and in newer devices is high efficiency and fast switching igbt2 it switches electric power in many modern appliances. Design, analysis, and testing of ppigbtbased submodule stack for the mmc vsc. Procedure for testing the igbt and relays in the centric. The test procedures are based on the principal esdevent models below. Igbt gate driver reference design for parallel igbts with. May 27, 20 home power electronics testing how to test igbt. I see lots of videos online talking about testing an igbt with 12v battery and lamp. Well planned testing procedure ensures that serviced modules are high quality and safe to use.
Igbt performance improvements with depletion stop trench structure ir has demonstrated that the ultrathin wafer technology improves the performance of the npt igbts. To test an igbt with multimeter, the meter should be used in diodechecking mode. Igbt module dynamic test circuit for 2 in 1 igbt module regulation of rbsoa rbsoa for 600v device 0 1x 2x 3x 4x 5x 0 200 400 600 800 ratedvcev magnifications to rating current,ica guarantied icx2 safety operation area rbsoa reverse bias safety operation area dynamic switching test by chip ic is rating. A basic test of scr function, or at least terminal identification, may be performed with an ohmmeter or megger. Pdf design, analysis, and testing of ppigbtbased submodule. Nonhomogeneous clamping or over clamping pressure on a device can potentially result in direct damage of the silicon or deterioration of the operating capability of. Jan 28, 2020 to test an igbt with multimeter, the meter should be used in diodechecking mode. Below 38khz, the igbt would be the device of choice, above it would be the fet. November 25, 2009 1 comment in field experiences by craig chamberlin one of the more common problemsseen in our variable frequency drive vfd repair division is the failure ofthe igbt insulated gate bipolar transistor power section modules. It is designed to be used in a test circuit with either the model 22905 5kv or the model 229010 10kv power supply.
Jan 04, 2018 testing an igbt with the diode tester on your meter. Check the condition of the protection diode using dmm digital multi meter in diode test. The more the igbt cells are provided, the lower state voltage the on be. Many designers view igbt as a device with mos input characteristics and bipolar output characteristic that is a voltagecontrolled bipolar device. Dynex semiconductor products are used in a variety of power electronics systems such as power generation and distribution systems, marine and rail propulsion drives and auxiliaries, induction heating, industrial motor. This information is subject to change without notice. Upon a desat detect, a mute logic immediately blocks the output of the isolator and initiates a softturnoff procedure, which disables outh and reduces the voltage at outl over a minimum time span of 2. For the test procedure you will need a multimeter that. This manual describes methods of handling required in order for the igbt. Hard copies prior to january 1, 2015 are controlled. With the module out of circuit remove the conductive foam and.
We generally do not recommend re testing by the customer because of the potential of damaging the device. For the test procedure you will need a multimeter that is capable of measuring resistance and has a diode check symbol for testing diodes. Fundamentals of mosfet and igbt gate driver circuits. A guide for a good thyristor is when the value is above 1mohm. Use of advanced processing technologies gives low onstate saturation voltages while maintaining the high switching speed needed for 20khz operation. Because the internal connection between gate and cathode is a single pn junction, a meter should indicate continuity.
Using mttf to predict igbt lifetime is not sufficient to avoid unexpected failures in the field due to the. They are usually located near the input and output terminals. Dumitru anghelus master thesis aalborg universitet. Igbt module reliability an59456 april 2015 ln32483 author. Aalborg universitet investigation on the shortcircuit. Design aspects for inverters with igbt high power modules dr.
Pdf reliability assessment of igbt through modelling and. Every fail mechanism will still occur also in the field. Investigation on the shortcircuit behavior of an aged igbt module through a 6 ka1. With a multimeter set to check diodes, check across the c1. Do not perform any test procedures until all electronic connections. Power mosfet models figure 2c is the switching model of the mosfet. Check out the fluke meter i use at remember not to touch an igbt. The model 2290pm200 protection module permits safe connection of a single 200v smu instrument into the test circuit. These tests should only be performed by a qualified service technician.
Before starting this procedure, ensure that the capacitors are fully discharged by measuring the dc voltage on the dc link rectifier side. If the igbt passed all of the above tests, the igbt is good. Fundamentals of mosfet and igbt gate driver circuits figure 2. Isolated igbt gatedrive flybuck power supply with 4. At low frequency the igbt delivers more current than a superjunction mosfet, while the fet performs better at higher frequencies.
With multimeter in diodecheck mode, the collector to emitter should give a normal diode. Therefore, the surf will ace structure has changed from the planar structure, in which the igbt cells are made planarly on the. An analysis of the test result from all three phases will show if you have a shorted thyristor or not. This concludes the basic testing of the uc3726 uc3727 igbt, refer to the datasheets and applications literature. Emc design guides for motor control applications alessio corsaro, carmelo parisi and craig rotay introduction. Warning igbt modules are very sensitive to esd electro static discharge. The punchthrough igbt used the epitaxial wafer and the carriers were highinjected from the collector side to obtain the low on state voltage. The most important parasitic components that influences switching performance are shown in this model. How to test igbt, find bad igbt, how to check igbt using multimeter, igbt testing circuit. Tida00174july 2014 isolated igbt gatedrive flybuck power. Abb semiconductors ag explosion tests on igbt high voltage modules ispsd toronto page 3 of 4 may 1999 superficially one could argue that depositing 10 kj into a single module fig.
Pdf several accelerated test methods exist in order to study the failures mechanisms of the high power igbt modules like temperature. Aspects on failure modes and reliability assessment in. An insulatedgate bipolar transistor igbt is a threeterminal power semiconductor device primarily used as an electronic switch which, as it was developed, came to combine high efficiency and fast switching. Go to file new device file, and under the device subfolder, create the file v. It should have battery voltage of less than 20v a typical unit using 9v battery is alright.
How to check a mosfet using a digital multimeter homemade. Oct 05, 2019 igbt testing with multimeter pdf to test an igbt with multimeter, the meter should be used in diodechecking mode. A collectoremitter junction test and a gate oxide test. Failure rate is calculated by multiplying a base failure rate with several conditional factors. Look for values, which are not in line with the majority of the thyristors, showing a lower value. Design aspects for inverters with igbt high power modules. Reliability assessment of igbt through modelling and experimental testing article pdf available in ieee access pp99. For the test procedure you will need a multimeter that is capable of measuring resistance. Drive module testing method comparison for drive service workshop. Ir has a mature, high performance ultrathin wafer npt igbt technology.
Field testing scr devices thyristors elementary basic first stage field testing for device functionality. Provides fully automated power testing cycling simple touchscreen user interface for mosfet, igbt and generic twopole devices up to 3 simultaneously records diagnostic information during test. An igbt module that has been found to be faulty can be checked by testing it on a transistor characteristics measuring device called a transistor curve tracer. Insulated gate bipolar transistor igbt technical paper pag enumb r. An application note for an igbt failure check process precautions. The insulated gate bipolar transistor igbt is a minoritycarrier device with high input impedance and large bipolar currentcarrying capability. Procedure for testing the igbt in the centric warning. An nchannel igbt is basically an nchannel power mosfet constructed on a ptype substrate, as illustrated by the generic igbt cross section in figure 1.
Stress of the devices 1st year of application before test. Pdf test setup for accelerated test of high power igbt modules. The insulated gate bipolar transistor igbt is a step1 igbt testing with multimeter. Usually there is no technical problem when driving a single module. In all applications where igbt modules are used, failure events can occur leading to high fault currents. The igbt element consists of many arranged structures called cells. Here below is the design procedure of the flybuck power supply for the igbt. Jul 08, 2019 for repeating the above procedure each time, you will need to reset the mosfet by shorting the gate and the drain leads using meter probe as explained earlier. We generally do not recommend retesting by the customer because of the potential of. In recent years, continuous demand for efficient, compact and low cost applications in the motor control. Application note es iesr test and measurement equipment. For pchannel the testing steps will be as per 1,2,3,4 and 5, but the polarities of the meter will change.
Recent growth of the insulated gate bipolar transistor igbt module market has been driven largely by the increasing demand for an efficient way to control and distribute power in the field of. By using the method of nearest level modulation with. The information presented in this section is intended to help users of mitsubishi igbt modules. The preliminary requirements to the digital voltmeter test include.
Below is the procedure to add this device as a new igbt device into the device database file v. Testing an igbt with the diode tester on your meter. Pdf voltage sourced converter vsc highvoltage direct current hvdc is moving to higher dc. With the module out of circuit, remove the conductive foam and short the gate to the emitter.
This file will appear in the file name list box at the upper left corner of the device database editor. Last updated on sat, 19 aug 2017 fuji igbt modules. This type of igbt testing procedure for amperis battery discharger is not complete, because in order to verify the complete efficiency of these modules its necessary to test them in real operating conditions however, this procedure is useful for a rapid passfail test. Failure mechanisms of insulated gate bipolar transistors. This curve does not take into consideration some important factors, like price and diode. Supply with 4 outputs ti designs design features ti designs provide the foundation that you need including methodology, testing, and design files to quickly evaluate and customize the system. An insulated gate bipolar transistor igbt is a threeterminal power semiconductor device primarily used as an electronic switch which, as it was developed, came to combine high efficiency and fast switching. Since it is designed to turn on and off rapidly, amplifiers that use it often synthesize complex wave forms with pulse.
Faq vfds how do i test the igbt power section on my drive. Insulated gate bipolar transistor overview the insulated gate bipolar transistor igbt is the most used semiconductor switching device due to its advantage of lower onstate voltage in comparison with the mosfet at voltage levels above 800 v, and low conduction losses in comparison with the bipolar transistor. Please perform an actual loading test that covers current, voltage, frequency, pulse. Igbt is a switching device designed to have the highspeed switching performance and gate voltage control of a power mosfet as well as the highvoltage largecurrent handling capacity of a. Dynamic switching test technology for igbt chip under high. The boards provided by infineon are subjected to functional testing only. Investigation on intermittent life testing program for igbt. This test is just like what you have done in the case of testing a silicon diode see testing a silicon diode. In this device, lower resistance can be obtained even at high current because of the conductivity.
Fa of electrical parameter and functional test fails. Igbt testing general testing procedures that are not included in this document include. Based on the extensive experience in processing ultrathin wafers, ir has developed a new 600v depletion stop igbt with trench cell targeted for appliance motion control and other inverter applications. The fact that i cant tell suggests your descriptions could possibly be improved. May 10, 2016 to test an igbt with multimeter, the meter should be used in diodechecking mode.
If one igbt driver is used for modules connected in parallel, the drivers amplifier has to provide the cumulated gate currents. Analysis of field returns by fa and feedback to process. Single discrete igbt 60 amperes4500 volts qis4506001 preliminary powerex, inc. Igbt test procedures fuji igbt modules raynet repair. Check out the fluke meter i use at remember not to touch an igbt or. Later, after forming an understanding of the igbt module, we shall look at the advancement and development of the igbt design, and indeed the igbt generation applied in the current. It switches electric power in many modern appliances. Igbt short circuit safe operating area soa capability and testing today igbt modules are the most widely used devices in a variety of power electronics applications due to their low loss and intrinsic protection features. Failure mechanisms of insulated gate bipolar transistors igbts. At the same time, the lifetime control technology was used because the carriers, which were. It consists of four alternating layers pnpn that are controlled by a metaloxidesemiconductor.
An application note for an igbt failure check process. Faq vfds how do i test the igbt power section on my. How to test an igbt using multimeter electronics post. It should have battery voltage of less than 20v a typical.
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